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制微波光电 |
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一、产品分类介绍： A、射频微波元器件
->射频模块/功率管
->电源系统专用元件 ->高频功放模块 ->特殊专用元件 ->高频三极管 ->微波毫米波振荡器 ->MMIC混频器
->适配器转换
->毫米波测试设备 ->限幅器 ->高功率倍增器 -> 通信专用元器件 -> 电子管/真空管/闸流管 -> TOSHIBA东芝系列 -> M/A-COM系列 -> ASI系列
->
EUDYNA/FUJITSU富士通
-> NEC日电系列
->
HITACHI/RENESAS日立
-> SIRENZA -> ALPHA -> WJ -> RFMD -> APT -> HITTITE -> ST意法半导体 -> QUALCOMM高通 -> PDI -> CML
B、光通讯元器件 ->光电通讯元器件 ->光耦/光电耦合器 ->AMP光模块 ->光纤收发器
C、二极管、三极管 E、无线收发模块 L、通信变压器 O、数据通信芯片
二、产品图文介绍： -> IC/二三极管封装 |
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MODEL EAMKa-28-SH Input Frequency: 13.25 to 20 GHz Input Power: +5dBm (Typical) Output Frequency: 26.5 to 40 GHz Output Power: 23 dBm (Min) Spurious and Harmonics: -20 dBc (Max) Bias: +8 V/750 mA (Typ) Input Connector: K(F) Output Connector: K(F) or WR-28 Waveguide with UG599/U Flange
MODEL EME-ADA-1020 / EME-AQA-0510 Input Frequency: 10 to 20 / 5 to 10 GHz Input Power: +5dBm (Typical) Output Frequency: 20 to 40 GHz Output Power: 19 dBm typ,17dBm min / 19 dBm typ,13dBm min Spurious and Harmonics: -20 dBc (Max) Bias: +/-5V Input Connector: K(F) Output Connector: K(F)
MODEL EAMW94-2-SH Center Frequency: 94 GHz(92-96GHz) Injection-Locking bandwidth: ±1 GHz(min) Input Frequency: 7.23 ±0.077GHz Input Power: +7 dBm (min) Saturated Output Power: 22dBm(158mW Max.) Operating Voltage/Current: +27±0.5V/0.25A Output Isolator: integrated Input Connector: SMA-F Output Connector: WR-10/UG-387/U-M
MODEL EAMW95-10-H Input Frequency: 12.85 - 14.28 GHz（option） Input Power: 10 to 17dBm Output Frequency: 90 - 100 GHz Output Power: 5 - 50mW Multiplication factor: 7 Consumed power: 8 W Input connector: SMA Output connector: WR-10/UG-387/U-M
MODEL EAMW96-8-H Input Frequency: 15.333 – 16.667GHz Input Power: +5dBm (Min) and +10 dBm (Nominal) Output Frequency: 96.0 +/-2.0 GHz (Min)(91.998-100.002GHz) Output Power: +8 dBm (Min) Harmonics Suppression: 20 dB (Typ) Bias: +8 V/750 mA (Typ) Input Connector : SMA (F) Output Waveguide: WR-10 with UG387/U Mod Flange
高功率MMIC放大器及开关（有最小定货要求）
37-40GHz MMIC Ka-band Power Amplifier Freq: 37 – 40 GHz Gain: 16 dB typ. P1dB: 33 dBm typ RF Input and Output Internally Matched to 50 Ohms DC bias: ≤10VDC
33-36GHz MMIC Ka-band Power Amplifier Freq: 33 – 36 GHz Gain: 16 dB typ. P1dB: 33 dBm typ RF Input and Output Internally Matched to 50 Ohms DC bias: ≤10VDC
26-40GHz MMIC Low Noise Amplifier RF frequency: 26 to 40 GHz Noise figure: <2.1 dB Linear gain: >17 dB P1dB: 11 dBm, typical Unconditionally stable Self-bias design (single supply) DC bias:≤ 10VDC
18-40GHz SPST Pin Switch Broad Bandwidth Low Loss, < 1 dB max. High Isolation, > 37 dB Excellent Return Loss, < -13 dB Fast Switching Speed, <5 ns High Power Handling, 37 dBm Peak,33 dBm CW Self-bias design on-chip(inductor,capacitor on-chip) DC bias:≤5VDC
26-45GHz SPDT(Single pole double throw) Switch Broad Bandwidth, 26-45 GHz Low Loss, < 1.3dB High Isolation, > 30 dB typical Fast Switching Speed, < 5 ns High Power Handling, 37 dBm Peak,33 dBm CW Self-bias design on-chip(inductor,capacitor on-chip) DC bias:≤5VDC
高功率固态放大器模块（有最小定货要求）
37-38GHz Ka-band Power Amplifier Module Freq.: 37–38GHz Gain: 15,20,30,40,60dB min option Flattness: +/- 1dB P1dB: 37dBm Min NF: 9dB typ. VSWR: 2:1 max Voltage: 15VDC / 20A Connector: WR28(K type as requested)
33.5-34.8GHz Ka-band Power Amplifier Module Freq.: 33.5–34.8GHz Gain: 15,20,30,40,60dB min option Flattness: +/- 1dB P1dB: 37dBm Min NF: 9dB typ. VSWR: 2:1 max Voltage: 15VDC / 20A Connector: WR28(K type as requested)
34.5-35.5GHz Ka-band Power Amplifier Module Freq.: 34.5–35.5GHz Gain: 15,20,30,40,60dB min option G. Flattness: +/- 1dB P1dB: 37dBm Min NF: 9dB typ. VSWR: 2:1 max Voltage: 15VDC / 20A Connector: WR28(K type as requested)
High Power CW / Pulsed IMPATT Amplifier Series Freq.: 33-37/43-47/58-62/92-96/12-140GHz Bandwith: up to 2GHz depending on numbers of stages Pulse width: CW long pulse 1us-1ms/0-50% duty short pulse 50ns-1us/0-0.5% duty Power output: 0.1 to 1W @CW 0.2-1.0W @long pulse 3,5,10,15,20W@short pulse Wavegude size: WR-28/WR-22/WR-15/WR-10/WR-08
* 可提供1-50W CW, K to Ka-Band 固态宽带高功率放大器模块,请联络 |
高功率倍频器
