热敏电阻、温度传感器、温度变送器、湿度传感器、湿度变送器、气体传感器、压力传感器、压力变送器、称重传感器、物（液）位传感器、液位变送器、流量传感器、流量变送器、电流（压）传感器、溶氧传感器、霍尔传感器、图像传感器、超声波传感器、位移传感器、速度传感器、加速度传感器、扭距传感器、红外传感器、紫外传感器、火焰传感器、激光传感器、振动传感器、轴角传感器、光电传感器、接近传感器、干簧管、继电器、微型电泵、磁敏（阻）传感器、接近开关、光电开关、色标传感器、光纤传感器、齿轮测速传感器、时间继电器、计

Chip	Package	Description
8AA0.4-9	SOJ22GL	APD Array 8 Elements, QE>80% at 760-910nm with NTC
16AA0.13-9	SOJ22GL	APD Array 16 Elements, QE>80% at 760-910nm with NTC
16AA0.13-9	DIL18	APD Array 16 Elements, QE>80% at 760-910nm
16AA0.4-9	SOJ22GL	APD Array 16 Elements, QE>80% at 760-910nm
25AA0.04-9	BGA	APD Array 25 (5x5) elements, QE>80% at 760-910nm with PTC
25AA0.16-9	BGA	APD Array 25 (5x5) elements, QE>80% at 760-910nm with PTC
64AA0.04-9	BGA	APD Array 64 (8x8) elements, QE>80% at 760-910nm with PTC
QA4000-9	TO8Si	Quadrant Avalanche Photodiode, QE>80% at 760-910nm

位敏探测器(PSD)

供应位敏探测器(PSD)，是根据横向光电效应(电压和电流信号随着光斑位置变化而变换的现象)的半导体敏感元件，将照射在光敏面上的光斑强度和位移量转换为电信号，以实现位置探测。

　

Position sensitive diodes (up to 20mm measuring range in two directions)
Type No.		Active area		Rise time	Dimensions
Chip	Package	Size	Area	865nm 10V 50Ω
Chip	Package	mm	mm2	ns
OD3.5-6	SO8	3.5×1	3.5	200	single
OD3.5-6	SMD	3.5×1	3.5	200	single
OD6-6	SO16	6×1	6	200	single
OD6-6	SMD	6×1	6	200	single
DL16-7	CERpin	4×4	16	500	dual a×is
DL16-7	CERsmd	4×4	16	500	dual a×is
DL16-7	LCC10G	4×4	16	500	dual a×is
DL100-7	CERpin	10×10	100	4000	dual a×is
DL100-7	CERsmd	10×10	100	4000	dual a×is
DL100-7	LCC10G	10×10	100	4000	dual a×is
DL400-7	CERpin	20×20	400	4000	dual a×is
DL400-7	CERsmd	20×20	400	4000	dual a×is

四象限探测器(QP)

供应四象限探测器(QP)，由小间隙隔开的四个有效探测区域组成。四象限探测器应用广泛，包括：激光光束的位置测量、其它需要精确调整的光学系统。

　

Series 6 - Quadrant photodiodes (low dark current)
Type No.		Active area		Dark current	Rise time
Chip	Package	Size	Area	10V	850nm 10V 50Ω
Chip	Package	mm	mm2	nA	ns
QP1-6	TO52	Ø1.13	4×0.25	0.1	20
QP5-6 in Stock	TO5	Ø2.52	4×1.25	0.2	20
QP5.8-6	TO5	2.4×2.4	4×1.45	0.4	20
QP10-6 in Stock	TO5	Ø3.57	4×2.5	0.5	20
QP20-6	TO8S	Ø5.05	4×5	1	30
QP50-6	TO8S	Ø7.8	4×12.5	2	40
QP50-6	TO8S flat	Ø7.8	4×12.5	2	40
QP100-6	LCC10G	Ø11.2	4×25	4	40
QP100-6	LCC10S	Ø11.2	4×25	4	40
Series 7 - Quadrant photodiodes (fully depletable)
Type No.		Active area		Dark current	Rise time
Chip	Package	Size	Area	10V	905nm 10V 50Ω
Chip	Package	mm	mm2	nA	ns
QP100-7	LCC10G	10×10	4×25	2	50
Series Q - Quadrant photodiodes (for 1064nm)
Type No.		Active area		Dark current	Rise time
Chip	Package	Size	Area	150V	1064nm 150V 50Ω
Chip	Package	mm	mm2	nA	ns
QP22-Q	TO8S	Ø5.3	4×5.7	1.5	12
QP45-Q	TO8S	6.7×6.7	4×10.96	8	12
QP45-Q	LCC10G	6.7×6.7	4×10.96	8	12
QP100-Q	LCC10G	10×10	4×25	6.5	12
QP154-Q	TO1032i	Ø14.0	4×38.5	10	12
QP154-Q	TO1081i	Ø14.0	4×38.5	10	12

铟镓砷探测器(InGaAs)

供应铟镓砷探测器(InGaAs)，有效探测直径可达3mm，具有低暗电流和高灵敏度的特点，封装形式包括：TO针脚形式和SMD贴片形式。其中，可见光增强模块可选。

　

InGaAs detectors (high sensitivity up to 2600nm)
Type No.		Active area		Dark current	Spectral responsivity		Waveband
Chip	Package	Size	Area	5V	650nm	1550nm	-
Chip	Package	mm	mm2	nA	A/W	A/W	nm
PC0.7-i	LCC6.1	1.0	0.7	2	0.05	0.95	900-1700
PC0.7-i	TO52S1	1.0	0.7	2	0.05	0.95	900-1700
PC0.7-ix	LCC6.1	1.0	0.7	2	0.3	0.95	600-1700
PC0.7-ix	TO52S1	1.0	0.7	2	0.3	0.95	600-1700
PC2.6-i	TO5i	2.0	2.6	10	0.05	0.95	900-1700
PC7.1-i	TO5i	3.0	7.1	25	0.05	0.95	900-1700
InGaAs-2.6	TO18	1.0	0.7	N.A	1.1A/W@2200nm		1200-2600

波长敏感探测器(WS)

供应波长敏感探测器(WS)，利用特定波长在硅基材料的辐射吸收深度来实现。硅晶体两个相互垂直的p-n结的结构特征，特别适合于单色光的波长检测。

　

Wavelength sensitive diodes (particularly suitable for monochromatic light)
Type No.		Dark current	Rise time Diode 1	Rise time Diode 2
Chip	Package	5V	0V 1kΩ	0V 1kΩ
Chip	Package	nA	ns	ns
WS7.56(Discontinued)	PCBA	10	10000	1000
WS7.56	TO5	10	10000	1000
WS7.56	TO5i	5	10000	1000

辐射探测器(RD)

供应辐射探测器(RD)，用于检测原子颗粒。辐射探测器具有高的吸收容量、极低的暗电流、完全耗尽等特点。

　

Detectors for ionizing radiation (silicon radiation detectors)
Type No.		Active area		Dark current	Gamma-energy Eγ
Chip	Package	Size	Area	-	-
Chip	Package	mm	mm2	nA	KeV
X0.5-γ	TO8S	Ø 0.8	0.5	0.005	> 1
X1.8-γ	TO8S	Ø 1.5	1.8	0.01	> 1
X5-γ	TO8S	Ø 2.52	5	0.01	> 1
X10-γ	TO8S	Ø 3.75	10	0.02	> 1
X10-γ	TO8S Sc	Ø 3.75	10	0.02	> 2
X10-6	TO39	Ø 3.57	10	0.5	> 5
X100-7	LCC10	10 x 10	100	5	> 5
X100-7-7.2	CerPin	10 x 10	100	5	> 5

光电管接收模块

供应光电管接收模块(图片左端，右端为其选配电源)，光电二极管、前置放大电路组成，标准配置和TEC制冷可选。该系列探测器模块对电路进行优化，将电磁干扰降到最小；内置前置放大电路可以用示波器或数据采集卡直接读取对应的电压值。TEC制冷模块可选，提高系统的信噪比。根据应用情况，光电二极管可选，包括：UV Si，Vis Si，NIR InGaAs，Extended InGaAs，PbS，PbSe。
　

根据探测器种类、有效探测面积、是否包含TEC制冷，如下型号可供选择：

Photodiode Receiver Module, Si (200-1000nm), 2.5mm

Photodiode Receiver Module, Si (200-1000nm), 5.0mm

Photodiode Receiver Module, Si (200-1000nm), 5.0mm, TE Cooled

Photodiode Receiver Module, Si (200-1000nm), 10.0mm

Photodiode Receiver Module, Si (300-1000nm), 1.0mm

Photodiode Receiver Module, Si (300-1000nm), 2.5mm

Photodiode Receiver Module, Si (300-1000nm), 5.0mm

Photodiode Receiver Module, Si (300-1000nm), 5.0mm, TE Cooled

Photodiode Receiver Module, Si (300-1000nm), 10.0mm

Photodiode Receiver Module, Si (300-1000nm), 11.0mm, TE Cooled

Photodiode Receiver Module, InGaAs (800-1600nm), 3.0mm, TE Cooled

Photodiode Receiver Module, InGaAs(800-1700nm), 1.0mm

Photodiode Receiver Module, InGaAs (1000-1700nm), 3.0mm

Photodiode Receiver Module, InGaAs(1200-2500nm), 1.0mm, TE Cooled

Photodiode Receiver Module, InGaAs(1200-2500nm), 3.0mm, TE Cooled

Photodiode Receiver Module, InGaAs(1200-2600nm), 1.0mm

Photodiode Receiver Module, InGaAs(1200-2600nm), 3.0mm

Photodiode Receiver Module, PbS(1000-2800nm), 2.0mm, TE Cooled

Photodiode Receiver Module, PbSe(1000-4500nm), 2.0mm, TE Cooled

光电管放大器

供应光电管放大器，直接将光电二极管、光电倍增管等电流源的电流信号转换成数字信号。通过切换A/W，可以设置电流值显示或者功率值显示(作为光功率计)。该系列光电管放大器具有如下特点：满量程输入范围从±20nA至±20mA；可变偏压从-14V至14V；LCD显示读数；RS-232串行接口。

　

Specifications
Max input without damage	±25mA
Full scale range	±20nA to 20mA in decade steps, 1pA max. resolution
A/W setting	0.100 to 1.000A/W in increments of .005A/W
Output impedance	100Ω
Bias voltage	Selectable -14V to +14V in 6.5mV increments
Analog ourput port	±2V corresponds to ±20,000 counts of range in use
Noise and Drift	<1pA/5 seconds on most sensitive range
Frequency response(-3dB)	DC to 2KHz, most sensitive range
Frequency response(-3dB)	DC to 40KHz, least sensitive range
Display	4 1/2 digit LCD, 0.4" high
Power requirement	Rechargeable Ni-MH batteries with approximately 10-hours
External supply	85-250VAC, 50-60Hz, <9VA
Dimensions	140mm(W)×63mm(H)×215mm(L)
Weight	0.9kg, excluding external power supply
Operating temperature	0 to +40°C
Accessories provided	RS-232 cable, power supply/charger, operating manual

光电二极管模块

供应光电二极管模块，目的在于简化光电二极管的使用。该系列光电二极管模块，配套用于雪崩二极管、四象限探测器、位敏探测器，特别适合于系统集成和科学研究。

不带电路板（集成放大电路）雪崩二极管(APD)
　

Type		Transimpedance/Ohm	Bandwidth/MHz
Chip	Package	Transimpedance/Ohm	Bandwidth/MHz
Series 8 (for 800nm)
AD230-8	TO5	2750	2000
AD230-8	TO52	2750	2000
AD500-8	TO5	2750	1000
AD500-8	TO52	2750	1300
Series 9 (for 900nm)
AD500-9-8015	TO52	2750	500
16AA0.13-9	Ceramic	10k	500
AD230-9	TO5	2750	600
AD500-9	TO5	2750	500
Series 10 (for 1064nm)
AD800-10	TO8S	10k	65

带电路板（集成放大电路和温度补偿功能）雪崩二极管(APD)和雪崩二极管阵列(APD Array)
　

Chip	Type
AD1100-8	USB-module APD-eval-kit
25AA0.04-9	125 MHz LIDAR APD-array-eval-kit
64AA0.04-9	125 MHz LIDAR APD-array-eval-kit

带电路板（集成放大电路）位敏探测器(PSD)、四象限探测器(QP)、波长敏感探测器(WS)
　

Chip	Type	Package
QP45-Q	Quadrant PD	HVSD
QP50-6	Quadrant PD	SD2
QP50-6	Quadrant PD	SD2-DIAG
QP50-6 (18µm)	Quadrant PD	SD2
QP50-6 (18µm)	Quadrant PD	SD2-DIAG
QP154-Q	Quadrant PD	HVSD
DL16-7	PSD	PCBA3
DL100-7	PSD	PCBA3
DL400-7	PSD	PCBA
WS7.56	Wavelength sensitive PD	PCBA2
X100-7 with Scintillator	Gamma pulse counter	Shielded module

高压电源模块
　

Max.Voltage/V	Ripple/mV	Description	Feature
-500	7.5	High performance HV source	Ultra low ripple
+500	7.5	High performance HV source	Ultra low ripple
+200	7.5	High performance HV source	Ultra low ripple
+200	<10	Compact HV source	Small footprint
+60	<10	PIN-photodiode HV source	Very small footprint

光电倍增管

供应光电倍增管，基于KETEK技术，专注于微弱光的检测。该系列光电倍增管具有如下特点：单光子计数、灵敏度高、信噪比高、效应速度快、温度影响小、结构紧凑，广泛应用于：化学分析、医疗诊断、科学研究、工业集成。

　

Chip Package	Active Area(mm²)	Pixel Size(µm)	Pixel number	Trench Technology	Geometrical efficiency(%)	Dark rate(kHz/mm²)	PDE(%)	Gain at 20% OV	Cross talk(%)
THD	1.2×1.2	50×50	576	No	70	500	50	2 E6	35
THD	3.0×3.0	50×50	3600	No	70	500	50	2 E6	35
THD	3.0×3.0	50×50	3600	Yes	63	300	40	2 E6	20
THD	6.0×6.0	60×60	10000	Yes	66	500	40	1 E7	25

光电二极管(PIN)

供应光电二极管(PIN)，用于将光信号转换为电信号，形成光电效应/光电池。pin光电二极管应用广泛，包括：安检设备、激光测距、运动控制、分析仪器、生物医疗、光通信、军事、航空航天。

备注：如果采购数量10片以上，提供配套的驱动电路模块。

　

PIN Series	Special features for Applications
Series-2 Optimized for 200-500nm	UV/Blue enhanced for analytical instruments, readout for scintillators.
Series-6b Optimized for 400-650nm	Blue/Green enhanced for photometric illuminometer.
Series-5b Optimized for 350-650nm	High-speed blue enhanced for high speed photometry.
Series-5t Optimized for 400-900nm	High-speed red-enhanced for high speed photometry.
Series-5 Optimized for 400-950nm	High-speed NIR-enhanced for high speed photometry.
Series-6 Optimized for 700-950nm	Low dark current, fast response for precision photometry.
Series-7 Optimized for 700-1100nm	Low capacity, full depletable for high energy physics.
Series-Q Optimized for 900-1100nm	Enhanced NIR sensitivity for YAG laser detection.
Series-I for 600-1700nm	InGaAs, high IR sensitivity, low dark current for Eye-sate laser detection.
Series-X for Ionizing radiation	With or without scintillator, ultra for medical, security, material.

Series 2: UV/Blue sensitive photodiodes
Type No.		Active area		Dark current	Rise time
Chip	Package	Size	Area	5V	410nm 5V 50Ω
Chip	Package	mm	mm2	nA	ns
PS1-2	TO52	1.0×1.0	1	0.01	50
PS1-2	LCC6.1	1.0×1.0	1	0.01	50
PC5-2	TO5	Ø2.52	5	0.3	150
PS7-2	TO5	2.66×2.66	7	0.4	200
PC10-2 in Stock	TO5	Ø3.57	10	1	300
PS13-2	TO5	3.5×3.5	13	1	300
PS33-2	TO8	5.7×5.7	33	2	600
PC50-2	BNC	Ø7.98	50	5	1000
PS100-2	BNC	10×10	100	10	2000
PS100-2	CERpin	10×10	100	10	2000
Band pass filter modules: PC10-2 TO5i with center wavelength 254nm, 300nm, 350nm
Series 6b: Blue/Green sensitive photodiodes
Type No.		Active area		Dark current	Rise time
Chip	Package	Size	Area	5V	410nm 5V 50Ω
Chip	Package	mm	mm2	nA	ns
PS1-6b in Stock	TO52S1	1×1	1	0.05	10
PS1-6b	LCC6.1	1×1	1	0.05	10
PC5-6b	TO5	Ø2.52	5	0.1	20
PS7-6b	TO5	2.7×2.7	7	0.15	25
PC10-6b	TO5	Ø3.57	10	0.2	45
PS13-6b	TO5	3.5×3.5	13	0.25	50
PS33-6b	TO8	5.7×5.7	33	0.6	140
PS100-6b	LCC10S	10×10	100	1	200
PS100-6b	CERpinE	10×10	100	1	200
PS100-6b	CERpinG	10×10	100	1	200
Band pass filter modules: PR20-6b TO5i with center wavelength 488nm, 550nm, 633nm, 680nm
Series 5b: High speed photodiodes (for blue-sensitive photodiodes)
Type No.		Active area		Dark current	Rise time
Chip	Package	Size	Area	3.5V	405nm 3.5V 50Ω
Chip	Package	mm	mm2	nA	ns
PS1.0-5b	TO52S1	1.0×1.0	1	0.01	1.3
PS1.0-5b	LCC6.1	1.0×1.0	1	0.01	1.3
PS7-5b	TO5	2.7×2.7	7	0.5	5
PC10-5b	TO5	Ø3.57	10	0.5	6
PS13-5b	TO5	3.5×3.5	13	1	6
Series 5t: High speed photodiodes for low voltages (for low operating voltages between 3 and 5 V, making them ideal for VIS and NIR applications in conjunction with CMOS components)
Type No.		Active area		Dark current	Rise time
Chip	Package	Size	Area	3.5V	850nm 3.5V 50Ω
Chip	Package	mm	mm2	nA	ns
PS0.25-5t	LCC6.1	0.5×0.5	0.25	0.01	0.4
PS0.25-5t	SMD1206	0.5×0.5	0.25	0.01	0.4
PC0.55-5t	LCC6.1	Ø0.84	0.55	0.01	1
PC0.55-5t	T1 3/4	Ø0.84	0.55	0.01	1
PC0.55-5t	T1 3/4 black	Ø0.84	0.55	0.01	1
PS1-5t	LCC6.1	1.0×1.0	1	0.01	1
PS7-5t	TO5	2.7×2.7	7	0.5	1
Series 5: High speed photodiodes (for fast rise times at low reverse voltages)
Type No.		Active area		Dark current	Rise time
Chip	Package	Size	Area	20V	850nm 20V 50Ω
Chip	Package	mm	mm2	nA	ns
PS0.25-5	TO52S1	0.5×0.5	0.25	0.1	0.4
PS0.25-5 in Stock	TO52S3	0.5×0.5	0.25	0.1	0.4
PS0.25-5	LCC6.1	0.5×0.5	0.25	0.1	0.4
PS0.25-5	SMD1206	0.5×0.5	0.25	0.1	0.4
PC0.55-5	TO52S1	Ø0.84	0.55	0.2	1
PC0.55-5	LCC6.1	Ø0.84	0.55	0.2	1
PS1.0-5	TO52S1	1.0×1.0	1	0.2	1.5
PS1.0-5	TO52S3	1.0×1.0	1	0.2	1.5
PS1.0-5	LCC6.1	1.0×1.0	1	0.2	1.5
PS7-5	TO5	2.7×2.7	7	0.5	2
PS11.9-5	TO5	3.45×3.45	11.9	1	3
PC20-5	TO8	Ø5.05	20	2	3.5
PS33-5	TO8	5.7×5.7	33	2	3.5
PS100-5	LCC10S	10×10	100	2	5
PS100-5	CERpinG	10×10	100	2	5
Series 6: IR photodiodes with min. dark current (for low-capacitance light detection as well as for α, β, ϒ and X-radiation detection)
Type No.		Active area		Dark current	Rise time
Chip	Package	Size	Area	10V	850nm 10V 50Ω
Chip	Package	mm	mm2	nA	ns
PC1-6	TO52S1	Ø1.13	1	0.05	10
PC1-6	TO52S3	Ø1.13	1	0.05	10
PC5-6	TO5	Ø2.52	5	0.1	13
PS7-6	TO5	2.66×2.66	7	0.1	15
PC10-6	TO5	Ø3.57	10	0.2	20
PS13-6	TO5	3.5×3.5	13	0.2	20
PC20-6	TO8	Ø5.05	20	0.3	25
PS33-6	TO8	5.7×5.7	33	0.4	25
PC50-6	TO8S	Ø7.98	50	0.5	30
PC100-6	BNC	Ø11.28	100	1	40
PS100-6	BNC	10×10	100	1	40
PS100-6	LCC10S	10×10	100	1	40
PS100-6	CERpinG	10×10	100	1	40
Series 7: IR photodiodes with fully depletable (very low capacitance levels)
Type No.		Active area		Dark current	Rise time
Chip	Package	Size	Area	10V	905nm 10V 50Ω
Chip	Package	mm	mm2	nA	ns
PC5-7	TO8i	Ø2.52	5	0.05	45
PC10-7	TO8i	Ø3.57	10	0.1	50
PC20-7	TO8Si	Ø5.05	20	0.2	50
PS100-7	LCC10G	10×10	100	1.5	50
Series Q: Photodiodes for 1064nm (specifically for laser rangefinders, laser-based targeting systems or any applications using YAG lasers or similar NIR radiation sources)
Type No.		Active area		Dark current	Rise time
Chip	Package	Size	Area	150V	1064nm 150V 50Ω
Chip	Package	mm	mm2	nA	ns
PC10-Q	TO8i	Ø3.57	10	0.5	14
PC20-Q	TO8Si	Ø5.05	20	1	14
PS100-Q	LCC10G	10×10	100	80	14
PC50-Q	TO8Si	Ø8	50	2.5	14

雪崩二极管(APD)

供应雪崩二极管(APD)，是一种内部增益机制的光电二极管。根据具体应用，可以选择：蓝光增强型、红光增强型、红外增强型(900nm、1064nm)。雪崩二极管广泛应用于：安检设备、激光测距、运动控制、分析仪器、生物医疗、光通信、军事、航空航天、光通讯。

备注：如果采购数量10片以上，提供配套的驱动电路模块。

　

PIN Series	Special features for Applications
Series-11 Optimized for 360-560nm	Blue enhanced for analytical instruments, readout for scintillators.
Series-12 Optimized for 500-750nm	Flat frequency response up to 3GHz for precise distance meas., communication.
Series-8 Optimized for 750-820nm	High-speed for resistance meas., laser scanner, high speed applications.
Series-9 Optimized for 750-930nm	Low rise time for laser rangefinder, LIDAR, basic technology for arrays.
Series-10 Optimized for 860-1100nm	Sensitivity at 1064nm for range finder, laser tracker, LIDAR.

Series 11: Blue sensitivity enhanced (for biomedical applications)
Type No.		Active area		Dark current	Rise time
Chip	Package	Size	Area	M=100	410nm 50Ω
Chip	Package	mm	mm2	nA	ns
AD800-11	TO52S1	Ø0.8	0.5	1	1
AD1900-11	TO5i	Ø1.95	3	5	2
Series 12: Red sensitivity enhanced (cut-off frequency up to 3 GHz)
Type No.		Active area		Spectral Responsivity	Cut-off frequency
Chip	Package	Size	Area	660nm M=100	660nm 50Ω
Chip	Package	mm	mm2	A/W	GHz
AD100-12	LCC6.1	Ø0.1	0.008	50	typ.3, min.2
AD100-12	LCC6.1f	Ø0.1	0.008	44	typ.3, min.2
AD100-12	TO52S1	Ø0.1	0.008	50	typ.3, min.2
AD230-12	LCC6.1	Ø0.23	0.042	50	typ.3, min.2
AD230-12	LCC6.1f	Ø0.23	0.042	44	typ.3, min.2
AD230-12 in Stock	TO52S1	Ø0.23	0.042	50	typ.3, min.2
AD500-12	LCC6.1	Ø0.5	0.196	50	typ.3, min.2
AD500-12	LCC6.1f	Ø0.5	0.196	44	typ.3, min.2
AD500-12	TO52S1	Ø0.5	0.196	50	typ.3, min.2
Series 8: Optimized for high cut-off frequencies-850 nm (optimized for high speeds)
Type No.		Active area		Dark current	Rise time
Chip	Package	Size	Area	M=100	M=100 20V 50Ω
Chip	Package	mm	mm2	nA	ns
AD100-8	LCC6.1	Ø0.1	0.008	0.05	<0.18
AD100-8	LCC6.1f	Ø0.1	0.008	0.05	<0.18
AD100-8	TO52S1	Ø0.1	0.008	0.05	<0.18
AD100-8	TO52S3	Ø0.1	0.008	0.05	<0.18
AD230-8	LCC6.1	Ø0.23	0.04	0.3	0.18
AD230-8	LCC6.1f	Ø0.23	0.04	0.3	0.18
AD230-8	TO52S1	Ø0.23	0.04	0.3	0.18
AD230-8	TO52S3	Ø0.23	0.04	0.3	0.18
AD500-8	LCC6.1	Ø0.5	0.2	0.5	0.35
AD500-8	LCC6.1f	Ø0.5	0.2	0.5	0.35
AD500-8	TO52S1	Ø0.5	0.2	0.5	0.35
AD500-8	TO52S2	Ø0.5	0.2	0.5	0.35
AD500-8	TO52S3	Ø0.5	0.2	0.5	0.35
AD800-8	TO52S1	Ø0.8	0.5	2	0.7
AD1100-8	TO52S1	Ø1.13	1	4-6	1
AD1900-8	TO5i	Ø1.95	3	15	1.4
AD3000-8	TO5i	Ø3	7.07	30	2
AD5000-8	TO8i	Ø5	19.63	60	3
AD230-8-2.3G	TO5	AD230-8-2.3G TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a hermetically sealed TO5 package.
AD500-8-1.3G	TO5	AD500-8-1.3G TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a hermetically sealed TO5 package.
Series 9: NIR sensitivity enhanced-900nm (specifically for LIDAR and laser rangefinders)
Type No.		Active area		Dark current	Rise time
Chip	Package	Size	Area	M=100	M=100
Chip	Package	mm	mm2	nA	ns
AD230-9	LCC6.1	Ø0.23	0.04	0.5	0.5
AD230-9	LCC6.1f	Ø0.23	0.04	0.5	0.5
AD230-9	TO52S1	Ø0.23	0.04	0.5	0.5
AD230-9	TO52S1F2	Ø0.23	0.04	0.5	0.5
AD230-9	TO52S3	Ø0.23	0.04	0.5	0.5
AD500-9	LCC6.1	Ø0.5	0.2	0.8	0.55
AD500-9	LCC6.1f	Ø0.5	0.2	0.8	0.55
AD500-9	TO52S1	Ø0.5	0.2	0.8	0.55
AD500-9	TO52S1F2	Ø0.5	0.2	0.8	0.55
AD500-9	TO52S2	Ø0.5	0.2	0.8	0.55
AD500-9	TO52S3	Ø0.5	0.2	0.8	0.55
AD800-9	TO52S1	Ø0.8	0.5	2	0.9
AD1100-9	TO52S1	Ø1.13	1	4	1.3
AD1500-9	TO5i	Ø1.5	1.77	2	2
AD3000-9	TO5i	Ø3	7.07	30	2
AD5000-9	TO8i	Ø5	19.63	60	3
AD230-9-400M	TO5	AD230-9-400M-TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a hermetically sealed TO-5 package.
AD500-9-400M	TO5	AD500-9-400M-TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a hermetically sealed TO-5 package.
Multi-Element Array
8AA0.4-9	SOJ22GL	APD Array 8 Elements, QE>80% at 760-910nm with NTC
16AA0.13-9	SOJ22GL	APD Array 16 Elements, QE>80% at 760-910nm with NTC
16AA0.13-9	DIL18	APD Array 16 Elements, QE>80% at 760-910nm
16AA0.4-9	SOJ22GL	APD Array 16 Elements, QE>80% at 760-910nm
25AA0.04-9	BGA	APD Array 25 (5×5) elements, QE>80% at 760-910nm with PTC
25AA0.16-9	BGA	APD Array 25 (5×5) elements, QE>80% at 760-910nm with PTC
64AA0.04-9	BGA	APD Array 64 (8×8) elements, QE>80% at 760-910nm with PTC
Series 10: NIR sensitivity enhanced - 1064nm (specifically for laser rangefinders, targeting systems or any applications using YAG lasers or similar NIR radiation sources)
Type No.		Active area		Dark current	Rise time
Chip	Package	Size	Area	M=100	M=100 1064nm 50Ω
Chip	Package	mm	mm2	nA	ns
AD500-10 in Stock	TO5i	Ø0.5	0.2	1.5	4
AD800-10	TO5i	Ø0.8	0.5	3	5
AD1500-10	TO5i	Ø1.5	1.77	7	5
AD4000-10	TO8Si	Ø4	12.56	50	6
AD800-10	TO8Si	High speed, high gain, low noise, low power consumption hybrid (AD800-10+TIA)
Multi-Element Array
QA4000-10	TO8Si	Quadrant Avalanche Photodiode, High QE at 850-1070nm

激光及光电器件产品目录红外测距传感器/距离测量传感器

紫外发光二极管

深紫外发光二极管	近紫外发光二极管
牙医蓝大功率发光二极管	大功率深紫外发光二极管
发光二极管驱动

激光二极管

气体分析用激光二极管	超辐射激光二极管
通用激光二极管	激光二极管驱动控制器
光纤耦合激光二极管	激光二极管配件
大功率泵浦激光二极管模块	半导体光学放大器

红外发光二极管

大功率红外发光二极管	中红外发光二极管
发光二极管驱动	近红外发光二极管

光电探测器

热电堆探测器	硅光电探测器
热释电探测器	锗光电探测器
中红外光电探测器	InGaAs光电探测器
紫外探测器	双波段探测器

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